First Principle Calculations of Isolated Bands in Half Metallic Intermediate Band Materials

The field of nanostructure physics has been growing rapidly in recent years and much theoretical and experimental insight has been gained giving access to a more efficient device oriented applications. In the nanotechnology area one of the main objectives is the production of materials with specific characteristics from the bulk materials. In this context we present here the study of a quantum design of a novel material with semiconductor characteristics that presents an intermediate half-filled band between the valence and the conduction bands of the host semiconductor.